Pentacene-Based Thin-Film Transistors With a Solution-Process Hafnium Oxide Insulator

Wei, Chia-Yu and Adriyanto, Feri and Lin, Yu-Ju and Li, Yu-Chang and Huang, Tong-Jyun and Chou, Dei-Wei and Wang, Yeong-Her (2009) Pentacene-Based Thin-Film Transistors With a Solution-Process Hafnium Oxide Insulator. IEEE ELECTRON DEVICE LETTERS, 30 (10). pp. 1039-1041.

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    Abstract

    Abstract—Pentacene-based organic thin-film transistors with solution-process hafnium oxide (HfOx) as gate insulating layer have been demonstrated. The solution-process HfOx could not only exhibit a high-permittivity (κ = 11) dielectric constant but also has good dielectric strength. Moreover, the root-mean-square surface roughness and surface energy (γs) on the surface of the HfOx layer were 1.304 nm and 34.24 mJ/cm2, respectively. The smooth, as well as hydrophobic, surface of HfOx could facilitate the direct deposition of the pentacene film without an additional polymer treatment layer, leading to a high field-effect mobility of 3.8 cm2/(V · s). Index Terms—Hafnium oxide, high permittivity, organic thinfilm transistor (OTFT), solution process, surface energy.

    Item Type: Article
    Subjects: Q Science > QC Physics
    Divisions: Fakultas Keguruan dan Ilmu Pendidikan > Pendidikan Fisika
    Depositing User: mr azis r
    Date Deposited: 11 Jun 2013 21:36
    Last Modified: 11 Jun 2013 21:36
    URI: https://eprints.uns.ac.id/id/eprint/947

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