High-Mobility Pentacene-Based Thin-Film Transistors With a Solution-Processed Barium Titanate Insulator

Wei, Chia-Yu and Kuo, Shu-Hao and Hung, Yu-Ming and Huang, Wen-Chieh and Adriyanto, Feri and Wang, Yeong-Her (2011) High-Mobility Pentacene-Based Thin-Film Transistors With a Solution-Processed Barium Titanate Insulator. IEEE ELECTRON DEVICE LETTERS, 32 (1).

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    Abstract

    Abstract—Pentacene-based organic thin-film transistors (OTFTs) with solution-processed barium titanate (Ba1.2Ti0.8O3) as a gate insulator are demonstrated. The electrical properties of pentacene-based TFTs show a high field-effect mobility of 8.85 cm2 · V−1 · s−1, a low threshold voltage of −1.89 V, and a low subthreshold slope swing of 310 mV/decade. The chemical composition and binding energy of solution-processed barium titanate thin films are analyzed through X-ray photoelectron spectroscopy. The matching surface energy on the surface of the barium titanate thin film is 43.12 mJ · m−2, which leads to Stranski–Krastanov mode growth, and thus, high mobility is exhibited in pentacene-based TFTs. Index Terms—Barium titanate, high field-effect mobility, high permittivity, organic thin-filmtransistor (OTFT), solution process.

    Item Type: Article
    Subjects: Q Science > QC Physics
    Divisions: Fakultas Matematika dan Ilmu Pengetahuan Alam > Fisika
    Depositing User: mr azis r
    Date Deposited: 11 Jun 2013 21:30
    Last Modified: 11 Jun 2013 21:30
    URI: https://eprints.uns.ac.id/id/eprint/943

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