Modifikasi permukaan semikonduktor lapis tipis grafit/komposit tio2-sio2 dengan penempelan logam tembaga (Cu) secara elektrodeposisi

WIBOWO, DENNY ARY (2006) Modifikasi permukaan semikonduktor lapis tipis grafit/komposit tio2-sio2 dengan penempelan logam tembaga (Cu) secara elektrodeposisi. Other thesis, Universitas Sebelas Maret.

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    ABSTRACT Denny Ari Wibowo, 2006. ELECTRODEPOSITION OF Cu ON THIN FILM GRAPHITE/COMPOSITE TiO2-SiO2 SEMICONDUCTOR AS SURFACE MODIFICATION. Thesis. Department of Chemistry. Mathematic and Science Faculty. Sebelas Maret University. Surakarta. Graphite/composite TiO2-SiO2 semiconductor has been modified by copper (Cu) electrodeposition. The aims of this research are studying the surface modification of graphite/composite TiO2-SiO2 semiconductor by Cu electrodeposition and the effects of this modification to the elevation of the photocatalytic effectivity of Graphite/composite TiO2-SiO2 semiconductor. Modification of Graphite/composite TiO2-SiO2 surface has been done by electrodeposition of CuSO4 0,4 M whereas the electric current has been varied follow : 0.004, 0.006, 0.008, 0.010, 0.012, and 0.014 A. Graphite/composite TiO2-SiO2 serve as cathode, Pt as anode, and electrodeposition time was 30 minutes. The graphite/composite TiO2-SiO2/Cu has been characterized by measurement of the weight of deposited Cu gravimetrically, X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM) and photoelectrochemical analysis. The highest electrodeposition efficiency (68.829%) is resulted from the electric current 0.008 A. The XRD spectrums show many new peaks on the range of 2θ = 40-45˚ and 2θ = 70-90˚ that are identified as peaks of Cu with face centered cubic crystal system, Cu crystal size is about 30-45 nm. Morphological analysis shows that Cu clusters fill the pores of thin film. Incident photon to current efficiencies (%IPCE) of graphite/composite TiO2-SiO2/Cu at electrodeposition current 0,014 A is 0.455 and higher than both of graphite/composite TiO2-SiO2 which has %IPCE 0.059 and graphite/TiO2/Cu which has %IPCE 0.142. The measurement of photoelectrochemistry effect is applied at 200-700 nm.

    Item Type: Thesis (Other)
    Subjects: T Technology > TP Chemical technology
    Divisions: Fakultas Matematika dan Ilmu Pengetahuan Alam > Kimia
    Depositing User: Saputro Bagus
    Date Deposited: 12 Jul 2013 00:10
    Last Modified: 12 Jul 2013 00:10

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