Growth of AlGaSb Compound Semiconductors on GaAs Substrate byMetalorganic Chemical Vapour Deposition

Ramelan, A.H and Harjana, H and Arifin, P (2010) Growth of AlGaSb Compound Semiconductors on GaAs Substrate byMetalorganic Chemical Vapour Deposition. Advances in Materials Science and Engineering.

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    Abstract

    Epitaxial AlxGa1-xSb layers on GaAs substrate have been grown by atmospheric pressure metalorganic chemical vapour deposition using TMAl, TMGa, and TMSb. We report the effect of V/III flux ratio and growth temperature on growth rate, surface morphology, electrical properties, and composition analysis. A growth rate activation energy of 0.73 eV was found. For layers grown on GaAs at 580◦C and 600◦C with a V/III ratio of 3 a high quality surface morphology is typical, with a mirror-like surface and good composition control. It was found that a suitable growth temperature and V/III flux ratio was beneficial for producing good AlGaSb layers. Undoped AlGaSb grown at 580◦C with a V/III flux ratio of 3 at the rate of 3.5 μm/hour shows p-type conductivity with smooth surface morphology and its hole mobility and carrier concentration are equal to 237 cm2 /V.s and 4.6×1017 cm-3 , respectively, at 77 K. The net hole concentration of unintentionally doped AlGaSb was found to be significantly decreased with the increased of aluminium concentration. All samples investigated show oxide layers (Al2O3,Sb2O3,andGa2O5) on their surfaces. In particular the percentage of aluminium-oxide was very high compared with a small percentage of AlSb. Carbon content on the surface was also very high.

    Item Type: Article
    Subjects: Q Science > Q Science (General)
    Q Science > QD Chemistry
    T Technology > T Technology (General)
    Divisions: Lembaga Penelitian dan Pengabdian Kepada Masyarakat - LPPM
    Depositing User: Anis Fagustina
    Date Deposited: 18 Apr 2014 03:59
    Last Modified: 18 Apr 2014 03:59
    URI: https://eprints.uns.ac.id/id/eprint/11892

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